The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Apr. 01, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yuki Yanagisawa, Kanagawa, JP;

Yushi Koriyama, Kumamoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 23/485 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
H01L 23/485 (2013.01); H01L 23/4825 (2013.01);
Abstract

There is provided a semiconductor device including a multi-gate transistor having a plurality of gates in a common active region, in which the multi-gate transistor has a comb-shaped metal structure in which a first metal is drawn out and bundled in a W length direction from contacts arranged in a single row in each of a source region and a drain region, and the multi-gate transistor has a wiring layout in which a root section of the first metal coincides immediately above an end of the source region and the drain region or is disposed inside the end of the source region and the drain region in the W length direction.


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