The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Sep. 09, 2019
The University Court of the University of Glasgow, Glasgow, GB;
Heriot-watt University, Edinburgh, GB;
Douglas John Paul, Glasgow, GB;
Derek Dumas, Glasgow, GB;
Jaroslaw Kirdoda, Glasgow, GB;
Ross W. Millar, Glasgow, GB;
Muhammad M. Mirza, Glasgow, GB;
Gerald S. Buller, Edinburgh, GB;
Peter Vines, Edinburgh, GB;
Kateryna Kuzmenko, Edinburgh, GB;
The University Court of the University of Glasgow, Glasgow, GB;
Heriot-Watt University, Edinburgh, GB;
Abstract
A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.