The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Sep. 09, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Vishwas Kumar Pandey, Madhya Pradesh, IN;

Christopher Olsen, Fremont, CA (US);

Rene George, San Carlos, CA (US);

Eric Shono, San Mateo, CA (US);

Lara Hawrylchak, Gilroy, CA (US);

Erika Hansen, San Jose, CA (US);

Tobin Kaufman-Osborn, Sunnyvale, CA (US);

Hansel Lo, San Jose, CA (US);

Kartik Shah, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45517 (2013.01); C23C 16/40 (2013.01); C23C 16/45563 (2013.01); C23C 16/45582 (2013.01); C23C 16/45587 (2013.01); C23C 16/45591 (2013.01); C23C 16/4584 (2013.01); C23C 16/52 (2013.01); H01L 21/67017 (2013.01);
Abstract

Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.


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