The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2024

Filed:

Dec. 13, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Kunifumi Suzuki, Yokkaichi Mie, JP;

Yuuichi Kamimuta, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/235 (2023.02); H01L 23/481 (2013.01); H10B 63/84 (2023.02); H10N 70/8828 (2023.02);
Abstract

A storage deviceincludes a phase change layercontaining tellurium, and a diffusion layercontaining at least one of germanium, silicon, carbon, tin, aluminum, gallium, and indium and disposed at a position adjacent to the phase change layer. The phase change layeris capable of changing between a first state and a second state different from each other in electric resistance. The phase change layeris in a crystal state in any of the first state and the second state. A length of the diffusion layerin a direction orthogonal to a z direction is shorter than a length of the phase change layerin the direction orthogonal to the z direction.


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