The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Sep. 14, 2021
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Sung-Lae Oh, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/022 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 23/528 (2013.01); H10B 43/40 (2023.02);
Abstract
A semiconductor memory device includes a first stack including a plurality of conductive layers and a plurality of first interlayer insulating layers alternately stacked on a substrate; a second stack including a plurality of sacrificial layers and a plurality of second interlayer insulating layers alternately stacked on the substrate; a plurality of stepped grooves defined at different depths in the first stack; and an opening defined in the second stack, and having, on a sidewall thereof, a plurality of steps which have the same heights as differences in depth between the plurality of stepped grooves.