The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Jul. 22, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Elina Nayebi, San Diego, CA (US);
Pranav Dayal, San Diego, CA (US);
Kee-Bong Song, San Diego, CA (US);
Samsung Electronics Co., Ltd., Yongin-si, KR;
Abstract
A method of optimizing at least one IQMC parameter value for an IQMC includes: generating a set of tested IQMC candidate parameter values by performing an iterative method including selecting a first IQMC candidate parameter value for the at least one parameter of the IQMC; determining, using the first IQMC candidate parameter value, a performance metric value that comprises at least one of (i) an image rejection ratio (IRR) value, (ii) a signal-to-interference-plus-noise ratio (SINR) value, or (iii) a signal-to-image ratio (SImR) value; and determining a second IQMC candidate parameter value that is an update to the first IQMC candidate parameter value. The method of optimizing at least one IQMC parameter value for an IQMC further includes determining an IQMC candidate parameter value of the set of tested IQMC candidate parameter values that optimizes the performance metric.