The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2024

Filed:

Oct. 25, 2022
Applicant:

Board of Trustees of Michigan State University, East Lansing, MI (US);

Inventors:

Kevin David Moran, Trenton, MI (US);

Guoming George Zhu, Novi, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H01F 38/12 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H01F 38/12 (2013.01); H03K 2217/0054 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A control circuit is provided for a field-effect transistor with a floating source node. The control circuit includes: a charge storage device electrically connected between a gate of the field-effect transistor and a DC power supply; a gate control circuit electrically connected between the charge storage device and the gate of the field-effect transistor; and a charge control circuit electrically connected between the DC power supply and the charge storage device. The gate control circuit is configured to receive a gate control signal and operates to turn on the field-effect transistor during on time of the gate control signal and turn off the field-effect transistor during off time of the gate control signal. The charge control circuit is also configured to receive the gate control signal and operates to charge the charge storage device with power from the DC power supply during off time of the gate control signal.


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