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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12136906 B1

PDFFull Text
Date of Patent:
Nov. 05, 2024

Filed:

May. 22, 2023

Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process

Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Dae Ho Kim, Cornelius, NC (US);

Mary Winters, Webster, NY (US);

Ramakrishna Vetury, Charlotte, NC (US);

Jeffrey B. Shealy, Davidson, NC (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorneys:

Richard T. Ogawa

Ogawa P.C.

Primary Examiner:

Jarrett J Stark

Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01); H10N 30/00 (2023.01); H10N 30/02 (2023.01); H10N 30/06 (2023.01); H10N 30/077 (2023.01); H10N 30/086 (2023.01); H10N 30/85 (2023.01); H10N 30/87 (2023.01); H10N 30/88 (2023.01); H10N 30/072 (2023.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H10N 30/02 (2023.02); H10N 30/06 (2023.02); H10N 30/077 (2023.02); H10N 30/086 (2023.02); H10N 30/706 (2024.05); H10N 30/85 (2023.02); H10N 30/875 (2023.02); H10N 30/877 (2023.02); H10N 30/88 (2023.02); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); H10N 30/072 (2023.02); H10N 30/704 (2024.05); Y10T 29/42 (2015.01);
Abstract

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

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