The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2024

Filed:

Sep. 17, 2021
Applicant:

Lumentum Japan, Inc., Kanagawa, JP;

Inventors:

Takafumi Taniguchi, Tokyo, JP;

Shigenori Hayakawa, Kanagawa, JP;

Yasushi Sakuma, Tokyo, JP;

Assignee:

Lumentum Operations LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H01S 5/12 (2021.01); H01S 5/22 (2006.01); H01S 5/223 (2006.01); H01S 5/227 (2006.01); H01S 5/00 (2006.01); H01S 5/02251 (2021.01); H01S 5/02253 (2021.01); H01S 5/02325 (2021.01); H01S 5/024 (2006.01); H01S 5/068 (2006.01); H01S 5/0683 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0265 (2013.01); H01S 5/2224 (2013.01); H01S 5/2235 (2013.01); H01S 5/0064 (2013.01); H01S 5/0085 (2013.01); H01S 5/02251 (2021.01); H01S 5/02253 (2021.01); H01S 5/02325 (2021.01); H01S 5/02415 (2013.01); H01S 5/06804 (2013.01); H01S 5/06832 (2013.01); H01S 5/06837 (2013.01); H01S 5/1231 (2013.01); H01S 5/2275 (2013.01); H01S 5/34306 (2013.01); H01S 2301/176 (2013.01);
Abstract

The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 μm or more.


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