The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Jun. 27, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Atsushi Era, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method of manufacturing an optical semiconductor device includes a step of forming semiconductor layers on the surface of an n-type InP substrate; an etching step of forming an active layer ridge by etching part of the semiconductor layers; a cleaning step of removing Si having adhered to the surface of the etched semiconductor layers while feeding a source gas for the crystal growth and an etching gas; and a crystal growth step of forming buried layers along both sidewalls of the active layer ridge at a processing temperature higher than that in the cleaning step, and the cleaning step is performed with the ridge being kept in shape.