The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Jun. 23, 2023
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Meng-Yang Chen, Hsinchu, TW;
Yuan-Ting Lin, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/10 (2010.01); H01L 33/30 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/002 (2013.01); H01L 33/04 (2013.01); H01L 33/10 (2013.01); H01L 33/305 (2013.01); H01L 33/62 (2013.01);
Abstract
A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.