The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Sep. 20, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Katsumi Sato, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor device that carries current in both directions and that enables accurate detection of current flowing through the semiconductor device. The semiconductor device includes a transistor and a diode both formed in a common semiconductor base body. The semiconductor device includes: a first main surface; a second main surface; a first electrode; a second electrode; a third electrode for current sensing; and a fourth electrode for current sensing. The semiconductor base body includes: a transistor region in which the transistor is formed; a diode region in which the diode is formed; and a separation region formed between the transistor region and the diode region. The third electrode is provided on the first main surface in the transistor region at a distance from the first electrode. The fourth electrode is provided on the first main surface in the diode region at a distance from the first electrode.