The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2024

Filed:

Mar. 27, 2024
Applicant:

Saras Micro Devices, Inc., Chandler, AZ (US);

Inventors:

Carlos Andres Riera Cercado, Atlanta, GA (US);

Jose F. Solis Camara, Atlanta, GA (US);

Assignee:

SARAS MICRO DEVICES, INC., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/64 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 49/02 (2006.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/642 (2013.01); H01L 23/5383 (2013.01); H01L 25/0652 (2013.01); H01L 28/40 (2013.01); H10B 80/00 (2023.02);
Abstract

A capacitor embeddable in a substrate core of a semiconductor device comprises a conductive substrate having a front side and a back side, a dielectric layer on the front side of the conductive substrate, a conductive polymer layer on the dielectric layer, a carbonaceous layer on the conductive polymer layer, a front metallization layer on the carbonaceous layer and electrically connected to the conductive polymer layer, and a back metallization layer on the back side of the conductive substrate and electrically connected to the conductive substrate. The conductive polymer layer, the carbonaceous layer, and the front metallization layer may define a plurality of electrically isolated stacks on the front side of the conductive substrate.


Find Patent Forward Citations

Loading…