The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2024

Filed:

Dec. 26, 2019
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yoshinori Yokoyama, Tokyo, JP;

Tetsu Negishi, Tokyo, JP;

Koji Yamazaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/053 (2006.01); H01L 23/367 (2006.01); H05K 3/32 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 23/053 (2013.01); H05K 3/321 (2013.01);
Abstract

A power module is obtained in which the thermal resistance in the range from a semiconductor device to a base plate is reduced and the stress in the joining portion is relieved. The power module includes at least one semiconductor device, an insulating substrate having an insulating layer, a circuit layer provided on an upper surface of the insulating layer and a metal layer provided on a lower surface of the insulating layer, and a sintering joining member with an upper surface larger in outer circumference than a back surface of the at least one semiconductor device, to join together the back surface of the at least one semiconductor device and an upper surface of the circuit layer on an upper-surface side of the insulating layer.


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