The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
May. 11, 2021
Analog Devices International Unlimited Company, County Limerick, IE;
Jochen Schmitt, Biedenkopf, DE;
Cian Padraic O Dalaigh, Raheen, IE;
Md Tarequzzaman, Limerick, IE;
Onur Necdet Urs, Limerick, IE;
Jan Kubik, Limerick, IE;
Enno Lage, Kiel, DE;
Analog Devices International Unlimited Company, Limerick, IE;
Abstract
A giant magnetoresistance (GMR) element is provided for use in a magnetic multi-turn sensor in which the free layer, that is, the layer that changes its magnetization direction in response to an external magnetic field so as to provide a resistance change, is thick enough to provide good shape anisotropy without exhibiting an AMR effect. To achieve this, at least a portion of the free layer comprises a plurality of layers of at least two different materials, specifically, a plurality of layers of at least a first material that is ferromagnetic and a plurality of layers of at least a second material that is known not to exhibit an AMR effect and that does not interfere with the GMR effect of the layers of ferromagnetic material.