The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Dec. 22, 2021
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite Grenoble Alpes, Saint Martin D'Heres, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres, FR;
Abstract
A method for producing at least one nitride layer includes providing a stack having a plurality of pillars extending from a substrate of the stack. Each pillar includes at least a crystalline section and a summit having a summit surface area The method also includes growing by epitaxy a crystallite from the summit of some the plurality of pillars and continuing the epitaxial growth of the crystallites until the crystallites supported by the pillars coalesce. The plurality of pillars includes at least one retention pillar and separation pillars. The pillars are configured so that once the nitride layer is formed, the at least one retention pillar retains the nitride layer and some of the separation pillars can fracture.