The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2024

Filed:

Jun. 01, 2020
Applicant:

Ajou University Industry-academic Cooperation Foundation, Suwon-si, KR;

Inventors:

Chang-Koo Kim, Seoul, KR;

Jun-Hyun Kim, Seongnam-si, KR;

Jin-Su Park, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); H01J 37/32449 (2013.01); H01L 21/31116 (2013.01); H01J 2237/334 (2013.01);
Abstract

Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:


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