The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Sep. 16, 2021
Applicant:

Tsinghua University, Beijing, CN;

Inventors:

Huaqiang Wu, Beijing, CN;

He Qian, Beijing, CN;

Xinyi Li, Beijing, CN;

Assignee:

TSINGHUA UNIVERSITY, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/801 (2023.02); H10B 63/30 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02);
Abstract

A memristor and a preparation method thereof are provided. The memristor includes at least one memristive unit, each of the at least one memristive unit includes a transistor and at least one memristive component, the transistor includes a source electrode and a drain electrode; and each of the at least one memristive component includes a first electrode, a resistive layer, a second electrode, and a passivation layer, the first electrode is electrically connected with the source electrode or the drain electrode; the resistive layer is provided between the first electrode and the second electrode; and the passivation layer at least covers a sidewall of the resistive layer.


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