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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12133417 B1

PDFFull Text
Date of Patent:
Oct. 29, 2024

Filed:

Feb. 24, 2021

Displaying substrate, manufacturing method thereof and display panel

Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Leilei Cheng, Beijing, CN;

Yongchao Huang, Beijing, CN;

Qinghe Wang, Beijing, CN;

Yang Zhang, Beijing, CN;

Bin Zhou, Beijing, CN;

Assignees:

HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Anhui, CN;

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

Attorney:

IPro, PLLC

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/32 (2023.01); H10K 59/80 (2023.01); H10K 59/82 (2023.01); H10K 71/20 (2023.01); H10K 77/10 (2023.01); G02F 1/13 (2006.01);
U.S. Cl.
CPC ...
H10K 59/1201 (2023.02); H10K 59/1213 (2023.02); H10K 59/32 (2023.02); H10K 59/82 (2023.02); H10K 59/87 (2023.02); H10K 71/20 (2023.02); H10K 77/10 (2023.02); G02F 1/1306 (2013.01);
Abstract

The disclosure relates to the technical field of display, in particular to a displaying substrate, a manufacturing method thereof and a display panel. The displaying substrate comprises a passivation layer () and a flat layer () covering the passivation layer (), wherein the flat layer () comprises a first flat via hole and a plurality of second flat via holes, the passivation layer () comprises a first passivation via hole, and the first flat via hole and the first passivation via hole form a first sleeve hole (); and the hole depth of the first flat via hole is smaller than that of each second flat via hole, and the hole depth of the first passivation via hole is greater than or equal to the difference between the maximum hole depth of all the second flat via holes and the hole depth of the first flat via hole.

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