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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12133410 B1

PDFFull Text
Date of Patent:
Oct. 29, 2024

Filed:

Jul. 01, 2021

Display device

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Sang Yeol Kim, Hwaseong-si, KR;

Eon Seok Oh, Seongnam-si, KR;

Woo Sik Jeon, Hwaseong-si, KR;

Jung Min Choi, Hwaseong-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:

KILE PARK REED & HOUTTEMAN PLLC

Primary Examiner:

Vongsavanh Sengdara

Int. Cl.
CPC ...
H10K 50/844 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 59/12 (2023.01); H10K 59/122 (2023.01); H10K 59/124 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/844 (2023.02); H10K 71/00 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 50/171 (2023.02); H10K 59/1201 (2023.02); H10K 59/122 (2023.02); H10K 59/124 (2023.02);
Abstract

A display device includes: a substrate including an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area; a transistor disposed on the display area of the substrate; a first electrode electrically connected to the transistor; an intermediate layer overlapping the first electrode; a second electrode disposed on the intermediate layer; a first dam disposed on the peripheral area of the substrate; and a first encapsulation inorganic layer disposed on the second electrode, wherein the first encapsulation inorganic layer is in contact with a side of the first dam in the peripheral area.

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