The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jun. 18, 2020
Applicant:
The University of Tokyo, Tokyo, JP;
Inventors:
Assignee:
THE UNIVERSITY OF TOKYO, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H10K 10/46 (2023.01); H10K 10/84 (2023.01); H10K 10/88 (2023.01); H10K 71/60 (2023.01); H10K 71/80 (2023.01); H10K 85/10 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H10K 10/84 (2023.02); H10K 10/471 (2023.02); H10K 10/88 (2023.02); H10K 71/60 (2023.02); H10K 71/611 (2023.02); H10K 71/80 (2023.02); H10K 85/141 (2023.02); H10K 85/6576 (2023.02); H10K 10/464 (2023.02); H10K 10/466 (2023.02);
Abstract
The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.