The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Nov. 12, 2019
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Kei Takahashi, Kanagawa, JP;
Yuki Okamoto, Kanagawa, JP;
Minato Ito, Kanagawa, JP;
Takahiko Ishizu, Kanagawa, JP;
Hiroki Inoue, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND, a node ND, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node NDthrough the capacitor. The comparison circuit has a function of comparing a voltage of the node NDand the voltage of the node ND. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node NDis higher than the voltage of the node ND