The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Dec. 03, 2021
Applicant:
Avicenatech Corp., Sunnyvale, CA (US);
Inventors:
Bardia Pezeshki, Mountain View, CA (US);
Cameron Danesh, Mountain View, CA (US);
Assignee:
AvicenaTech, Corp., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/04 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H04B 10/60 (2013.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/325 (2013.01); H04B 10/60 (2013.01);
Abstract
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with some of the barriers doped and some of the barriers not doped, may be driven at high data rates with low drive current densities. Preferably the barriers that are not doped are the barriers closest to one side of a p region or an n region of the LED. With Mg doping, preferably the barriers that are not doped are the barriers closest to the p region of the LED.