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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12132140 B1

PDFFull Text
Date of Patent:
Oct. 29, 2024

Filed:

Sep. 16, 2021

Ink containing light-emitting elements and method of fabricating display device using the same

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hyo Jin Ko, Seoul, KR;

Duk Ki Kim, Suwon-si, KR;

Yong Hwi Kim, Asan-si, KR;

Jun Bo Sim, Suwon-si, KR;

Na Mi Hong, Cheonan-si, KR;

Jong Hyuk Kang, Suwon-si, KR;

Gyu Bong Kim, Suwon-si, KR;

Hoi Lim Kim, Seoul, KR;

Sae Na Yun, Suwon-si, KR;

Chang Hee Lee, Seoul, KR;

Hyun Deok Im, Seoul, KR;

Eun A Cho, Suwon-si, KR;

Jae Kook Ha, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:

KILE PARK REED & HOUTTEMAN PLLC

Primary Examiner:

Victor A Mandala

Assistant Examiner:

Colleen E Snow

Int. Cl.
CPC ...
H01L 33/00 (2010.01); B82B 3/00 (2006.01); C09D 11/033 (2014.01); C09D 11/50 (2014.01); C09D 11/52 (2014.01); H01L 27/15 (2006.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); B82B 3/0052 (2013.01); C09D 11/033 (2013.01); C09D 11/50 (2013.01); C09D 11/52 (2013.01); H01L 27/156 (2013.01); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01);
Abstract

An ink includes a solvent, and light-emitting elements dispersed in the solvent, each of the light-emitting elements comprising semiconductor layers and an insulating film partially surrounding outer surfaces of the semiconductor layers, wherein the solvent has Hansen solubility parameters of a polarity parameter between about 4 and about 9 and a hydrogen bonding parameter between about 6 and about 11.

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