The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Sep. 12, 2023
Applicants:

Shanghai Jinko Green Energy Enterprise Management Co., Ltd., Shanghai, CN;

Zhejiang Jinko Solar Co., Ltd., Zhejiang, CN;

Inventors:

Kun Yu, Zhejiang, CN;

Changming Liu, Zhejiang, CN;

Xinyu Zhang, Zhejiang, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 31/0368 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1868 (2013.01); H01L 31/02366 (2013.01); H01L 31/03685 (2013.01); H01L 31/068 (2013.01); H01L 31/1824 (2013.01);
Abstract

Provided are a solar cell, including: a semiconductor substrate, in which a rear surface of the semiconductor substrate having non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm; a first passivation layer located on a front surface of the semiconductor substrate; first and second tunnel oxide layers located on the non-pyramid-shaped microstructures; first and second doped conductive layers located on a surface of the first and second tunnel oxide layers, the first and second doped conductive layer has different conductive types; a second passivation layer located on a surface of the first and second doped conductive layers; and electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.


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