The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Aug. 05, 2022
Applicant:

Mellanox Technologies, Ltd., Yokneam, IL;

Inventors:

Oren Steinberg, Tal Shahar, IL;

Anders Gösta Larsson, Haovas, SE;

Attila Fülöp, Gothenburg, SE;

Elad Mentovich, Tel Aviv, IL;

Isabelle Cestier, Haifa, IL;

Moshe B. Oron, Rehovot, IL;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1848 (2013.01); H01L 31/03048 (2013.01); H01L 31/109 (2013.01);
Abstract

Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value and forming, onto the first semiconductor layer, a grading layer associated with a continuous compositional grading. The example method further includes forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value. The second bandgap value is different than the first bandgap value.


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