The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Mar. 25, 2022
Applicant:

Bolb Inc., Livermore, CA (US);

Inventors:

Jianping Zhang, Livermore, CA (US);

Ying Gao, Livermore, CA (US);

Ling Zhou, Livermore, CA (US);

Alexander Lunev, Livermore, CA (US);

Assignee:

BOLB INC., Livermore, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/16 (2006.01); H01L 25/16 (2023.01); H01L 31/0304 (2006.01); H01L 31/167 (2006.01); H01L 31/173 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 31/167 (2013.01); H01L 25/167 (2013.01); H01L 31/03044 (2013.01); H01L 31/173 (2013.01); H01L 33/32 (2013.01);
Abstract

A light emitting device with on-chip optical power readout includes a light emitting mesa and a light detecting mesa formed adjacent to each other on the same substrate of a chip, and a portion of the light emitted from the light emitting mesa is transmitted to the light detecting mesa at least through the substrate. The light emitting mesa and the light detecting mesa have exactly the same epitaxial structure and can be electrically isolated from each other by an insulation layer, or an airgap formed therebetween, or by ion implantation. The light emitting mesa and the light detecting mesa can also share an n-type structure and a common n-electrode while having their own p-electrode, respectively.


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