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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12132133 B1

PDFFull Text
Date of Patent:
Oct. 29, 2024

Filed:

Jun. 21, 2023

Avalanche photodetectors and image sensors including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sanghyun Jo, Seoul, KR;

Jaeho Lee, Seoul, KR;

Haeryong Kim, Seongnam-si, KR;

Hyeonjin Shin, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Sheikh Maruf

Int. Cl.
CPC ...
H01L 29/66 (2006.01); G01S 7/481 (2006.01); G01S 17/931 (2020.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/032 (2006.01); H01L 31/0352 (2006.01); H01L 31/101 (2006.01); H01L 31/107 (2006.01); H01S 5/0687 (2006.01); H10K 39/32 (2023.01); G05D 1/00 (2006.01); H01L 31/0256 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); G01S 7/4816 (2013.01); G01S 7/4817 (2013.01); G01S 17/931 (2020.01); H01L 27/14643 (2013.01); H01L 27/14647 (2013.01); H01L 31/02027 (2013.01); H01L 31/022466 (2013.01); H01L 31/028 (2013.01); H01L 31/032 (2013.01); H01L 31/035209 (2013.01); H01L 31/035281 (2013.01); H01L 31/03529 (2013.01); H01L 31/1013 (2013.01); H01S 5/0687 (2013.01); H10K 39/32 (2023.02); G05D 1/024 (2013.01); H01L 31/0296 (2013.01); H01L 31/0304 (2013.01); H01L 31/0312 (2013.01); H01L 31/0324 (2013.01); H01L 2031/0344 (2013.01); H01L 31/035218 (2013.01);
Abstract

A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

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