The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Nov. 04, 2021
Sang Hwan Lee, Daejeon, KR;
Sang Hwan Lee, Daejeon, KR;
Abstract
Provided is a backside illuminated avalanche photodiode and a manufacturing method thereof. The backside illuminated avalanche photodiode comprises a semiconductor substrate; a semiconductor structure including a first semiconductor layer being arranged on a front surface of the semiconductor substrate and including a first conductivity type bottom electrical contact layer, a light absorption layer, and a multiplication layer, and a second semiconductor layer, stacked on the first semiconductor layer and including an etch stop layer and a second conductivity type top electrical conductivity layer stacked on the etch stop layer; a plurality of V-grooves in parallel with each other being formed by etching the top electrical contact layer; and a reflective top electrode formed by depositing a multi layer thin metal films on the top electrical contact layer wherein plurality of V-grooves parallel with each other are formed.