The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Aug. 06, 2021
Applicant:
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); G02F 1/1368 (2006.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 29/42384 (2013.01); G02F 1/1368 (2013.01); H10K 59/1213 (2023.02);
Abstract
A thin film transistor and a display panel are provided. A first dimension of a first transmission portion electrically connected to a source heavily-doped portion is different from a second dimension of a second transmission portion electrically connected to a drain heavily-doped portion, so that an intensity of an electric field of carriers transmitted by the transmission portion corresponding to the larger one of the first dimension or the second dimension is smaller when the thin film transistor is turned on, thereby reducing the bombardment effect of the carriers on a source or a drain and improving the stability of thin film transistor.