The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Aug. 31, 2021
Applicant:

Kookmin University Industry Academy Cooperation Foundation, Seoul, KR;

Inventors:

Dae Hwan Kim, Seoul, KR;

Dong Yeon Kang, Seongnam-si, KR;

Jun Tae Jang, Bucheon-si, KR;

Shin Young Park, Seoul, KR;

Hyun Kyu Lee, Suwon-si, KR;

Sung Jin Choi, Seoul, KR;

Dong Myoung Kim, Seoul, KR;

Wonjung Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); G06N 3/063 (2023.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7841 (2013.01); G06N 3/063 (2013.01); H01L 21/02178 (2013.01); H01L 21/02565 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/7883 (2013.01);
Abstract

Disclosed is a synaptic transistor, including a substrate, an expansion gate electrode disposed to extend in one direction on the substrate, a gate insulating layer including ions, covering the expansion gate electrode, and disposed on the substrate, a channel layer disposed on the gate insulating layer to correspond to one end of the expansion gate electrode, source and drain electrodes spaced apart from each other, covering both ends of the channel layer, and disposed on the gate insulating layer, and a pad electrode disposed on the gate insulating layer to correspond to the other end of the expansion gate electrode.


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