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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12132090 B1

PDFFull Text
Date of Patent:
Oct. 29, 2024

Filed:

Sep. 22, 2023

Semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Akio Suzuki, Kanagawa, JP;

Shinpei Matsuda, Kanagawa, JP;

Shunpei Yamazaki, Setagaya, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

NIXON PEABODY LLP

Jeffrey L. Costellia

Primary Examiner:

Michelle Mandala

Assistant Examiner:

Jordan M Klein

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01); H10B 41/70 (2023.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); H01L 29/0673 (2013.01); H01L 29/40114 (2019.08); H01L 29/42384 (2013.01); H01L 29/42392 (2013.01); H01L 29/66969 (2013.01); H01L 29/775 (2013.01); H01L 29/7786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H01L 29/7883 (2013.01); H10B 41/70 (2023.02);
Abstract

A transistor which is resistant to a short-channel effect is provided. The transistor includes a first conductor in a ring shape, an oxide semiconductor including a region extending through an inside of a ring of the first conductor, a first insulator between the first conductor and the oxide semiconductor, a second insulator between the first conductor and the first insulator, and a charge trap layer inside the ring of the first conductor. The charge trap layer is inside the second insulator and configured to be in a floating state.

Find Patent Forward Citations

Suzuki, Akio. (2024). Semiconductor device (U.S. Patent No. 12132090). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12132090

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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