The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Jul. 08, 2020
Applicant:

Hitachi, Ltd., Tokyo, JP;

Inventors:

Junpei Kusukawa, Tokyo, JP;

Eiichi Ide, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 23/00 (2006.01); H01L 23/60 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 25/16 (2013.01); H01L 23/3735 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/3303 (2013.01); H01L 2224/33181 (2013.01);
Abstract

A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.


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