The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Dec. 18, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jae Man Yoon, Gyeonggi-do, KR;

Jin Hwan Jeon, Gyeonggi-do, KR;

Tae Kyun Kim, Gyeonggi-do, KR;

Jung Woo Park, Gyeonggi-do, KR;

Su Ock Chung, Gyeonggi-do, KR;

Jae Won Ha, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76831 (2013.01); H10B 12/0335 (2023.02); H10B 12/482 (2023.02);
Abstract

A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.


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