The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Feb. 13, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Koji Sadamatsu, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
The fabrication method for a silicon carbide semiconductor device according to this disclosure includes a step of forming a dielectric film over part of a silicon carbide layer, a step of forming an ohmic electrode adjoining the dielectric film on the silicon carbide layer, a step of removing an oxidized layer on the ohmic electrode, a step of forming a mask with its opening on the side opposite to the side where the ohmic electrode is adjoining the dielectric film on the ohmic electrode having the oxidized layer removed and on the dielectric film, and a step of wet etching of a film to be etched with hydrofluoric acid with the mask formed. With the fabrication method for a silicon carbide semiconductor device described in this disclosure, it is possible to fabricate a silicon carbide semiconductor device with reduced failure.