The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jan. 24, 2017
Sumitomo Chemical Company, Limited, Tokyo, JP;
Hajime Fujikura, Ibaraki, JP;
Taichiro Konno, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
There is provided a nitride semiconductor template, including: a substrate having a front surface and a back surface opposite to the front surface; a back side semiconductor layer provided on a back surface side of the substrate, comprising a polycrystalline group III nitride semiconductor, and having a linear expansion coefficient different from a linear expansion coefficient of the substrate; and a front side semiconductor layer provided on a front surface side of the substrate, comprising a monocrystalline group III nitride semiconductor, and having a linear expansion coefficient different from a linear expansion coefficient of the substrate, wherein a thickness of the front side semiconductor layer is a thickness exceeding a critical thickness at which cracks are generated in the front side semiconductor layer when only the front side semiconductor layer is formed without forming the back side semiconductor layer.