The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Jul. 18, 2023
Applicants:

Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Ling Shi, Beijing, CN;

Yipeng Chen, Beijing, CN;

Xuewei Tian, Beijing, CN;

Ke Liu, Beijing, CN;

Dan Guo, Beijing, CN;

Zhenhua Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/131 (2023.01); G09G 3/3241 (2016.01); H01L 27/12 (2006.01); H10K 59/121 (2023.01); H10K 59/122 (2023.01); H10K 59/35 (2023.01); H10K 59/65 (2023.01);
U.S. Cl.
CPC ...
H10K 59/131 (2023.02); G09G 3/3241 (2013.01); H10K 59/1216 (2023.02); H10K 59/122 (2023.02); H10K 59/65 (2023.02); G09G 2300/0465 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2360/14 (2013.01); H01L 27/124 (2013.01); H10K 59/1213 (2023.02); H10K 59/35 (2023.02);
Abstract

A display substrate is provided, including: a base substrate and a plurality of sub-pixels disposed on the base substrate. Each sub-pixel includes a pixel driving circuit, and the pixel driving circuit includes a writing transistor, a compensation transistor, a first reset transistor, and a storage capacitor. The display substrate includes a semiconductor layer, a first conductive layer and a second conductive layer disposed in sequence on the base substrate. Gates of the writing transistor, the compensation transistor and the first reset transistor are in the first conductive layer and are implemented as an integral structure. Active layers of the writing transistor, the compensation transistor and the first reset transistor are in the semiconductor layer. A first storage capacitor electrode of the storage capacitor is in the first conductive layer, and a second storage capacitor electrode of the storage capacitor is in the second conductive layer.


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