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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12127444 B1

PDFFull Text
Date of Patent:
Oct. 22, 2024

Filed:

May. 11, 2021

Display device and method for manufacturing the same

Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Sungwon Cho, Hwaseong-si, KR;

Yu-Gwang Jeong, Anyang-si, KR;

Daesoo Kim, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Victoria K Hall

Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/417 (2006.01); H01L 51/56 (2006.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01); H10K 71/00 (2023.01); H10K 71/20 (2023.01); H01L 27/12 (2006.01); H10K 59/12 (2023.01); H10K 59/124 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 59/123 (2023.02); H01L 29/41733 (2013.01); H10K 59/1213 (2023.02); H10K 71/00 (2023.02); H10K 71/233 (2023.02); H01L 27/1251 (2013.01); H10K 59/1201 (2023.02); H10K 59/124 (2023.02); H10K 77/111 (2023.02); H10K 2102/311 (2023.02);
Abstract

A display device includes a substrate, an active pattern disposed on the substrate, a gate electrode overlapping the active pattern, an inorganic insulation layer covering the active pattern, a source metal pattern and an etch-delaying pattern. The source metal pattern includes a first portion that is disposed on the inorganic insulation layer, and a second portion that passes through the inorganic insulation layer and electrically contacts the active pattern. The etch-delaying pattern is disposed between the active pattern and the first portion of the source metal pattern, contacts the second portion of the source metal pattern, and includes a different material from the inorganic insulation layer.

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