The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Aug. 23, 2019
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Yusuke Kinoshita, Kyoto, JP;
Yasuhiro Yamada, Tokyo, JP;
Takashi Ichiryu, Osaka, JP;
Masanori Nomura, Osaka, JP;
Hidetoshi Ishida, Osaka, JP;
Abstract
A GaN layer is formed over the substrate. An AlGaN layer is formed on the GaN layer. A first source electrode, a first gate electrode, a second gate electrode, and a second source electrode are formed on or over the AlGaN layer. A first p-type AlGaN layer where 0≤x1<1 is interposed between the first gate electrode and the AlGaN layer. A second p-type AlGaN layer where 0≤x2<1 is interposed between the second gate electrode and the AlGaN layer. The substrate is electrically insulated from all of the first source electrode, the second source electrode, the first gate electrode, and the second gate electrode. The bidirectional switch further includes a terminal used to connect the substrate to a fixed potential node. The terminal is connected to the substrate.