The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jan. 19, 2022
Applicant:
Dialog Semiconductor Inc., Campbell, CA (US);
Inventor:
Wenduo Liu, Campbell, CA (US);
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/32 (2007.01); H02M 1/08 (2006.01); H02M 1/44 (2007.01); H02M 3/335 (2006.01); H03K 17/18 (2006.01);
U.S. Cl.
CPC ...
H02M 1/32 (2013.01); H02M 1/08 (2013.01); H02M 1/44 (2013.01); H02M 3/33507 (2013.01); H03K 17/18 (2013.01);
Abstract
A failure detection circuit for a power switch transistor in a power switching converter is provided that compares a drive voltage for driving a gate of the power switch transistor to a plurality of thresholds. Based upon when the drive voltage crosses each threshold in the plurality of thresholds, a logic circuit determines whether a fault condition exists for the power switch transistor.
Quick Actions:
Liu, Wenduo. (2024). In-circuit detection of early failure of power switch transistors in switching power converters (U.S. Patent No. 12126253). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12126253
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile