The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

May. 14, 2021
Applicant:

Kyocera Sld Laser, Inc., Goleta, CA (US);

Inventors:

Melvin McLaurin, Santa Barbara, CA (US);

James W. Raring, Santa Barbara, CA (US);

Assignee:

KYOCERA SLD Laser, Inc., Goleta, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01S 5/0234 (2021.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/323 (2006.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/0206 (2013.01); H01S 5/021 (2013.01); H01S 5/0213 (2013.01); H01S 5/0215 (2013.01); H01S 5/0216 (2013.01); H01S 5/0217 (2013.01); H01S 5/0218 (2013.01); H01S 5/0234 (2021.01); H01S 5/0425 (2013.01); H01S 5/22 (2013.01); H01S 5/2214 (2013.01); H01S 5/222 (2013.01); H01S 5/32308 (2013.01); H01S 5/04254 (2019.08); H01S 5/2009 (2013.01); H01S 5/2031 (2013.01); H01S 5/30 (2013.01); H01S 2301/173 (2013.01);
Abstract

Methods for fabricating ultraviolet laser diode devices include providing substrate members comprising gallium and nitrogen or aluminum and nitrogen, forming an epitaxial material overlying a surface region of the substrate members, patterning the epitaxial material to form epitaxial mesa regions, depositing a bond media on at least one of the epitaxial mesa regions, bonding the bond media on at least one of the epitaxial mesa regions to a handle substrate, subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate, and processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device.


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