The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Apr. 14, 2021
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Ziyi Zhang, Tokyo, JP;
Maki Kushimoto, Nagoya, JP;
Chiaki Sasaoka, Nagoya, JP;
Hiroshi Amano, Nagoya, JP;
Abstract
A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 μm or more from the side surfaces, to form a second electrode (step S).