The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Mar. 26, 2021
Applicant:

Lumentum Japan, Inc., Kanagawa, JP;

Inventors:

Hayato Takita, Yokohama, JP;

Atsushi Nakamura, Komoro, JP;

Shunya Yamauchi, Sagamihara, JP;

Hideaki Asakura, Sagamihara, JP;

Assignee:

Lumentum Japan, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/227 (2006.01); H01S 5/02315 (2021.01); H01S 5/02345 (2021.01); H01S 5/0239 (2021.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/12 (2021.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/227 (2013.01); H01S 5/02315 (2021.01); H01S 5/02345 (2021.01); H01S 5/0239 (2021.01); H01S 5/0265 (2013.01); H01S 5/04256 (2019.08); H01S 5/12 (2013.01); H01S 5/2224 (2013.01); H01S 2301/176 (2013.01);
Abstract

An optical semiconductor device includes a semiconductor substrate with a protrusion that forms a lower end portion of a mesa stripe structure in a stripe shape extending in a first direction; a multi-quantum well layer in a stripe shape extending in the first direction on the protrusion, wherein the multi-quantum well layer forms an intermediate portion of the mesa stripe structure; a semiconductor layer in a stripe shape extending in the first direction on the intermediate portion, wherein the semiconductor layer forms an upper end portion of the mesa stripe structure; and a semi-insulating semiconductor layer in contact with side surfaces of the mesa stripe structure on both sides in a second direction perpendicular to the first direction. The optical semiconductor device may include a first electrode on a surface of the semiconductor substrate and/or a second electrode on the upper end surface of the mesa stripe structure.


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