The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Dec. 22, 2021
Applicant:

Abocom Systems, Inc., Miaoli County, TW;

Inventors:

Cheng-Yi Ou, Miaoli County, TW;

Chih-Yuan Lin, Miaoli County, TW;

Te-Lieh Pan, Miaoli County, TW;

Cheng-Hsiao Chi, Miaoli County, TW;

Assignee:

ABOCOM SYSTEMS, INC., Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18361 (2013.01); H01S 5/18311 (2013.01); H01S 5/3416 (2013.01); H01S 5/343 (2013.01);
Abstract

A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, a tunnel junction layer, a second mirror layer, an active layer, an oxide layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.


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