The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Nov. 04, 2020
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Tomofumi Yokoyama, Matsumoto, JP;

Hitoshi Yamamoto, Chino, JP;

Tsutomu Teraoka, Matsumoto, JP;

Naoyuki Toyoda, Suwa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/134 (2010.01); H01M 4/131 (2010.01); H01M 4/525 (2010.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); H01M 4/131 (2013.01); H01M 4/525 (2013.01); H01M 10/0525 (2013.01); H01M 2004/028 (2013.01);
Abstract

A positive electrode active material composite body according to the present disclosure includes a positive electrode active material containing a transition metal element and having a particulate shape, and an ion conductor provided in contact with a surface of the positive electrode active material, wherein the ion conductor is constituted by a material containing Li, Zr, and M which is at least one type of element selected from the group consisting of Nb, Sb, and Ta, the transition metal element is partially diffused in the ion conductor, and an average decrease ratio of a content ratio of the transition metal element until a point where the content ratio of the transition metal element in the ion conductor to be determined by a characteristic X-ray has reached 12% of the content ratio of the transition metal element at an interface between the positive electrode active material and the ion conductor based on a substance amount is 0.5% or more and 6.1% or less per 1 nm thickness from the interface.


Find Patent Forward Citations

Loading…