The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Jul. 22, 2022
Applicant:

Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;

Inventors:

Gong Chen, Xiamen, CN;

Chuan-gui Liu, Xiamen, CN;

Ting-yu Chen, Xiamen, CN;

Su-hui Lin, Xiamen, CN;

Ling-yuan Hong, Xiamen, CN;

Sheng-hsien Hsu, Xiamen, CN;

Kang-wei Peng, Xiamen, CN;

Chia-hung Chang, Wuhu, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/36 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/0095 (2013.01); H01L 33/02 (2013.01); H01L 33/36 (2013.01); H01L 33/385 (2013.01); H01L 33/40 (2013.01);
Abstract

A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.


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