The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Oct. 25, 2021
Meta Platforms Technologies, Llc, Menlo Park, CA (US);
Wei Sin Tan, Plymouth, GB;
Andrea Pinos, Plymouth, GB;
Xiang Yu, Plymouth, GB;
Samir Mezouari, Swindon, GB;
META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US);
Abstract
A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.