The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Sep. 29, 2020
Jinko Green Energy (Shanghai) Management Co., Ltd, Shanghai, CN;
Zhejiang Jinko Solar Co., Ltd, Zhejiang, CN;
Xueting Yuan, Shanghai, CN;
Xinyu Zhang, Shanghai, CN;
JINKO GREEN ENERGY (SHANGHAI) MANAGEMENT CO., LTD, Shanghai, CN;
ZHEJIANG JINKO SOLAR CO., LTD, Zhejiang, CN;
Abstract
Provided is a method for passivating a silicon-based semiconductor device and a silicon-based semiconductor device. The method includes the following steps: cutting, by using a cutting process, a preset region of the silicon-based semiconductor device, to form a first surface associated with the preset region; smoothing the first surface to adjust a surface appearance of the first surface, so that a height difference between a protrusion and a recess of a non-marginal region on the first surface is less than 20 nm; and passivating the smoothed first surface to form a first passivation layer on the first surface. The present application can reduce or avoid the problem of efficiency reduction caused by cutting a silicon-based semiconductor device and help to obtain a more efficient silicon-based semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile