The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Dec. 28, 2021
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7824 (2013.01); H01L 29/0653 (2013.01); H01L 29/0869 (2013.01); H01L 29/0886 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01);
Abstract
In a semiconductor device having a lateral transistor, a source wiring layer is disposed above at least a part of an interlayer insulating film. The interlayer insulating film is electrically connected to a source electrode and is extended toward a drain region to form a source field plate.
Yanagi, Shinichiro. (2024). Semiconductor device with lateral transistor (U.S. Patent No. 12125906). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12125906
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile