The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Oct. 07, 2021
Applicant:
Hua Hong Semiconductor (Wuxi) Limited, Wuxi, CN;
Inventors:
Assignee:
HUA HONG SEMICONDUCTOR (WUXI) LIMITED, Wuxi, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/14683 (2013.01);
Abstract
A method for making an isolation region of a CIS device includes: forming a block layer on a substrate, below the block layer being an oxide layer, below the oxide layer being a silicon nitride layer, and a shallow trench isolation being formed in the substrate; forming a hard mask layer on the surface of the block layer, the material of the hard mask layer is oxide; performing a photolithography process and an etching process to form an isolation region pattern in the hard mask layer; performing an ion implantation process to form an isolation region in the substrate corresponding to the isolation region pattern.